inchange semiconductor isc product specification isc silicon npn power transistor BDY58 description collector-emitter sustaining voltage- : v ceo(sus) = 125v(min) high power dissipation low collector saturation voltage applications lf signal power amplification. high current fast switching absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector- base voltage 160 v v ceo collector-emitter voltage 125 v v ebo emitter-base voltage 10 v i c collector current-continuous 25 a i b b base current-continuous 6 a p c collector power dissipation @t c =25 175 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDY58 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ; i b = 0 125 v v (br)cbo collector- base breakdown voltage i c = 5ma ; i e = 0 160 v v (br)ebo emitter-base breakdown voltage i e = 5ma ; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 1a 1.4 v i cbo collector cutoff current v cb = 120v; i e = 0 0.5 ma i ce r collector cutoff current v ce = 80v; r be = 10 v ce = 80v; r be = 10 ; t c =100 0.5 10 ma i ebo emitter cutoff current v eb = 10v; i c = 0 0.5 ma h fe-1 dc current gain i c = 10a ; v ce = 4v 20 80 h fe-2 dc current gain i c = 20a ; v ce = 4v 15 f t current-gain?bandwidth product i c = 1a ; v ce = 15v; f= 10mhz 10 mhz switching times t on turn-on time i c = 15a , i b = 1.5a, b 1.0 s t off turn-off time i c = 15a , i b1 = -i b2 = 1.5a, 2.0 s isc website www.iscsemi.cn 2
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